IAUCN04S7L006ATMA1 vs IAUCN04S7N009ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L006ATMA1 by Infineon and IAUCN04S7N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUCN04S7L006ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | 175 A |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Operating Temperature Range | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-43 | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS-7 trench | MOSFET (Metal Oxide) |
| Automotive Qualified | Yes (AEC-Q101) | — |
| RoHS Status | Compliant | Compliant |
| Pin Count | 8 | — |
| Packaging | Tape and Reel (ATMA1) | — |
| Polarity | Single N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Operating Temperature | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| MSL Level | — | 1 |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |