IAUCN04S7L009ATMA1 vs IAUCN04S7N019GATMA1 对比
详细并排对比 IAUCN04S7L009ATMA1 出自 Infineon 和 IAUCN04S7N019GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ 量产中Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ 量产中规格对比
| 参数 | IAUCN04S7L009ATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.96 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS™ 7 (trench-gate) | — |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id, Tc=25°C) | 275 A (Tj) | — |
| Continuous Drain Current (Id, Tc=100°C) | 175 A | — |
| Power Dissipation (Pd, Tc=25°C) | 129 W | — |
| Rds(on) Max @ Vgs=10V | 0.91 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| 封装 | PG-TDSON-8-34 (TDSON EP) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction temperature range from datasheet] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per family datasheet) |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Lead-Free | — | Yes |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |