IAUCN04S7L009ATMA1 vs IAUCN04S7N019GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7L009ATMA1 by Infineon and IAUCN04S7N019GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7L009ATMA1 IAUCN04S7N019GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7L009ATMA1 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS™ 7 (trench-gate) —
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id, Tc=25°C) 275 A (Tj) —
Continuous Drain Current (Id, Tc=100°C) 175 A —
Power Dissipation (Pd, Tc=25°C) 129 W —
Rds(on) Max @ Vgs=10V 0.91 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Package PG-TDSON-8-34 (TDSON EP) PG-THSOG-4-1 (SSO4G 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +175 °C (Tj) [DATA_NEEDED: junction temperature range from datasheet]
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per family datasheet)
MSL Level 1 —
RoHS Status Compliant Compliant
Product Family — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

Datasheets & Resources

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