IAUCN04S7N019GATMA1 vs IAUA180N04S5N012AUMA1 对比

详细并排对比 IAUCN04S7N019GATMA1 出自 Infineon 和 IAUA180N04S5N012AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N019GATMA1 IAUA180N04S5N012AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $1.96
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
封装 PG-THSOG-4-1 (SSO4G 5x6 mm) PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm²
安装类型 Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
工作温度范围 [DATA_NEEDED: junction temperature range from datasheet] -55 °C to +175 °C (Tj)
Part Number — IAUA180N04S5N012AUMA1
Series — OptiMOS-5 40 V
FET Type — N-Channel
Continuous Drain Current (ID) — 180 A (Tc)
Maximum Power Dissipation (PD) — 125 W (Tc)
R_DS(on) (max) — 1.2 mΩ at 10 V VGS
Gate-Source Voltage (VGS) max — ±20 V
Technology — OptiMOS-5 Trench

数据手册与资源

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