IAUCN04S7N019GATMA1 vs IAUCN04S7N019DATMA1 对比

详细并排对比 IAUCN04S7N019GATMA1 出自 Infineon 和 IAUCN04S7N019DATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N019DATMA1 IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon

IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon

IAUCN04S7N019DATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N019GATMA1 IAUCN04S7N019DATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
封装 PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-60 (SuperSO8)
安装类型 Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 (family)
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
工作温度范围 [DATA_NEEDED: junction temperature range from datasheet] —
Technology — OptiMOS 7 40V
Configuration — Dual N-Channel (array)
Continuous Drain Current (ID, Tc) — 160 A (Tj)
Power Dissipation (PD, Tc) — 96 W
工作结温 — -55 C to +175 C
Input Capacitance (Ciss, typ.) — 1.465 nF
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
ESD Protection — Yes (gate integrated)
MSL 等级 — 1 (per JEDEC J-STD-020, family default)

数据手册与资源

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