IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
料号： IAUCN04S7N019DATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.96 | $19.60 |
| 100 | $1.75 | $175.00 |
| 500 | $1.52 | $760.00 |
| 1,000 | $1.28 | $1,280.00 |
| 5,000 | $1.05 | $5,250.00 |
IAUCN04S7N019DATMA1 概述
A dual MOSFET array is a small outline surface-mount module that integrates two identical N-channel MOSFET dies in a common package, sharing the drain thermal pad but providing independent gate/source control on each device. Arrays sit within the broader discrete power-semiconductor hierarchy (MOSFET -> power MOSFET -> discrete semiconductor) and are commonly used where PCB area is constrained but two switches are needed, such as synchronous buck converters, half-bridges, and OR-ing controllers.
Key features of this part include the 40V OptiMOS 7 platform with optimized FOM (RDS(on) x Qg), very low on-resistance per channel, integrated ESD protection on the gate, and a -55C to +175C operating junction temperature range that suits under-hood automotive environments. The 1.465 nF typical input capacitance enables fast switching transitions with minimal driver losses.
Architecturally, each die uses a trench-gate vertical DMOS cell structure on the OptiMOS 7 process. This yields a low figure-of-merit and reduced Qrr (reverse-recovery charge), which is critical in hard-switched bridge topologies where body-diode recovery losses dominate. The shared source-down thermal pad provides low thermal resistance to the PCB copper pour.
Typical applications include 12V automotive eFuse / load-switch blocks, BLDC motor half-bridges for fans and pumps, synchronous rectification in 12V buck converters for ADAS ECUs, USB-PD source switches, and high-current battery protection in 12V/24V Li-ion systems. The AEC-Q101 automotive qualification on the part number's prefix family supports deployment in road-vehicle electronics.
When designing with this device, ensure the gate-driver voltage (VGS) is driven to 10V to achieve the rated low RDS(on) and to avoid partial-enhancement losses. The shared drain pad requires substantial PCB copper area (at least 1 sq inch on each side) to keep junction temperature within safe limits at high continuous current.
This page synthesizes distributor pricing, drop-in OptiMOS 7 alternatives with the same PG-TDSON-8-60 footprint, and practical PCB layout guidance not found in the manufacturer datasheet alone.
直接替换替代料： IAUCN04S7N019DATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUCN04S7N019DATMA1 （相同外形与封装尺寸） ——差异在于 Package, Automotive Qualification, Technology, Mounting Type, MSL Level.
快速对比工具——选择替代料号进行并排对比：
IAUCN04S7N019GATMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →IAUCN04S7N027GATMA1
✅ 直接替换✓ 有现货
$0.72 / 个
查看数据手册 →IAUCN04S7N037GATMA1
✅ 直接替换✓ 有现货
$0.89 / 个
查看数据手册 →IAUCN04S7L042GATMA1
✅ 直接替换✓ 有现货
$0.86 / 个
查看数据手册 →IAUCN04S7L050HATMA1
✅ 直接替换✓ 有现货
$0.83 / 个
查看数据手册 →IAUCN04S7N019DATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 7 40V |
| Configuration | Dual N-Channel (array) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc) | 160 A (Tj) |
| Power Dissipation (PD, Tc) | 96 W |
| 封装 | PG-TDSON-8-60 (SuperSO8) |
| 安装类型 | Surface Mount |
| 工作结温 | -55 C to +175 C |
| Input Capacitance (Ciss, typ.) | 1.465 nF |
| Automotive Qualification | AEC-Q101 (family) |
| ESD Protection | Yes (gate integrated) |
| MSL 等级 | 1 (per JEDEC J-STD-020, family default) |
| RoHS 状态 | Compliant |
IAUCN04S7N019DATMA1 引脚配置
| 引脚 1 | G1 — Gate of MOSFET 1 |
| 引脚 2 | S1 — Source of MOSFET 1 |
| 引脚 3 | S1 — Source of MOSFET 1 |
| 引脚 4 | G2 — Gate of MOSFET 2 |
| 引脚 5 | S2 — Source of MOSFET 2 |
| 引脚 6 | S2 — Source of MOSFET 2 |
| 引脚 7 | NC — Not connected (per datasheet) |
| 引脚 8 | NC — Not connected (per datasheet) |
| 引脚 PAD | D1+D2 — Common drain thermal pad (bottom) |
安全工作区 (estimated from datasheet continuous ratings)
典型应用
IAUCN04S7N019DATMA1 适用于 6 应用s: 12V Automotive eFuse / Load Switch, BLDC Motor Half-Bridge (Fan / Pump), Synchronous Rectification in 12V Buck Converters, USB-PD Source / Sink Power Switch, High-Current Battery Protection (12V/24V Li-ion), Server / Datacenter 12V Hot-Swap OR-ing.
12V Automotive eFuse / Load Switch
The IAUCN04S7N019DATMA1 fits 12V automotive eFuse blocks where its 40V VDS rating provides 28V load-dump transient headroom and 160A continuous current handles high-power body-domain loads. Its 1.465nF Ciss enables fast <1us turn-off for short-circuit protection. Placed as a high-side switch with a gate driver like 1ED020I12B2XUMA1, the 019 grade minimizes I^2R conduction loss. AEC-Q101 qualification supports deployment in road-vehicle ECUs.
推荐
BLDC Motor Half-Bridge (Fan / Pump)
The IAUCN04S7N019DATMA1 fits BLDC fan and pump half-bridges where its dual N-channel configuration provides the high-side and low-side switches of one phase. The 96W (Tc) power dissipation keeps junction rise small at typical 5-10A motor currents, and the 160A rating supports stall-current transients. Paired with IRSM808-105MH module or BTS70402EPGXUMA1, it implements a compact 12V/24V motor drive. OptiMOS 7 low Qrr reduces dead-time loss.
推荐
Synchronous Rectification in 12V Buck Converters
The IAUCN04S7N019DATMA1 fits the synchronous-rectifier (low-side) position of 12V-input buck converters for ADAS ECUs and infotainment rails. Its 40V VDS rating supports 12V nominal input plus transients, and the 019 RDS(on) grade minimizes conduction loss at 20-30A load currents. The 1.465nF Ciss and low Qg of OptiMOS 7 reduce driver loss at 500kHz switching. Paired with IPW60R037P7XKSA1 on the high-side, it forms a 600V-class high-density buck.
推荐
USB-PD Source / Sink Power Switch
The IAUCN04S7N019DATMA1 fits USB-PD source and sink power-switch paths where 20V/5A (100W) capability is required. The 40V VDS rating covers the 20V PD range with margin, and the dual-channel configuration allows VBUS and CC-line protection in one footprint. The AEC-Q101 automotive qualification enables in-vehicle USB charging. Used with IPB60R280P7ATMA1 for the AC-side front end, it forms a complete PD source solution.
推荐
High-Current Battery Protection (12V/24V Li-ion)
The IAUCN04S7N019DATMA1 fits 12V/24V Li-ion battery-pack protection FETs where 160A continuous rating handles motor-start inrush. The 40V VDS covers 4S Li-ion (16.8V max) plus transient spike margin, and the dual-die array fits one direction of the bidirectional H-bridge disconnect. Paired with ISC015N06NM5ATMA1 as a redundant disconnect, it provides two-level pack protection. The 175C Tj rating supports hot-pack environments.
推荐
Server / Datacenter 12V Hot-Swap OR-ing
The IAUCN04S7N019DATMA1 fits 12V hot-swap and OR-ing blocks in server and datacenter power shelves where its 160A continuous current handles a full PSU rail. The 40V VDS comfortably covers 12V with margin for ringing, and the dual-die array supports back-to-back OR-ing FET topology. The OptiMOS 7 low Qrr eliminates body-diode reverse-recovery induced cross-conduction. AEC-Q101 automotive grade adds ruggedness for harsh server-room thermal envelopes.
推荐
推荐产品汇总
工程参考数据： IAUCN04S7N019DATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUCN04S7N019GATMA1 | IAUCN04S7N027GATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-60 (SuperSO8) | PG-TDSON-8-60 - same | PG-TDSON-8-60 - same | PG-TDSON-8-60 - same | PG-TDSON-8-60 - same | PG-TDSON-8-60 - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) Grade (mOhm) | 1.9 (019 grade) | 1.9 (019 grade) | 2.7 (027 grade) | 3.7 (037 grade) | 4.2 (042 grade, logic level) | 5.0 (050 grade, logic level) |
| Gate Type | Standard (10V drive) | Standard (10V drive) | Standard (10V drive) | Standard (10V drive) | Logic level (L-suffix, 4.5V drive capable) | Logic level (L-suffix, 4.5V drive capable) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
关键差异点
- Lowest RDS(on) grade in the IAUCN04S7 family （对比 IAUCN04S7N027GATMA1)
- Standard gate (10V) drive, not logic level （对比 IAUCN04S7L042GATMA1)
- OptiMOS 7 technology with low Qrr （对比 IAUCN04S7N037GATMA1)
设计说明
At continuous 160A drain current, the IAUCN04S7N019DATMA1 dissipates up to 96W (Tc). Estimated: with 2 oz copper pour on at least 1 sq inch of PCB around the PG-TDSON-8-60 thermal pad, the junction-to-ambient thermal resistance is approximately 35 C/W, yielding a 70C junction rise at full load. For 80% derated operation, use 2 sq inches of copper on each side of the pad.
The PG-TDSON-8-60 SuperSO8 package shares its drain thermal pad between both MOSFET dies. Place at least 8 thermal vias (0.3mm drill, 1.0mm pitch) directly under the exposed pad, with the top-side copper flood at least 1 sq inch. Keep high-current source traces wide (>=2mm per 5A) to avoid copper-heating loss.
Route the gate-drive traces as short as possible and away from the drain switching node to minimize gate-loop inductance. Use a gate-source resistor of 10-100k ohm to prevent false turn-on from dV/dt coupling. Keep the gate-driver within 5mm of the package pins to limit ringing and dv/dt induced shoot-through.
Do not drive the gate below 10V (or 4.5V for L-suffix parts) to achieve datasheet RDS(on). Driving the IAUCN04S7N019DATMA1 gate at 5V will not reach the rated 1.9 mOhm RDS(on) and can double conduction loss. Also, ensure the 40V VDS rating is not exceeded during load-dump transients - add a TVS clamp if the design sees >28V transients.
合规信息
AEC-Q101 (automotive) qualified per Infineon part-number prefix family IAUC. RoHS and lead-free per Infineon product-page disclosures.
