IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon
料号： IAUCN08S7L018ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.85 | $925.00 |
| 1,000 | $1.55 | $1,550.00 |
IAUCN08S7L018ATMA1 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. It belongs to the hierarchy: MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. Modern low-voltage trench MOSFETs such as this Infineon OptiMOS 7 part are optimized for switching power supplies, motor drives, and battery protection applications where conduction loss directly determines system efficiency.
Key features include 80 V drain-source breakdown voltage, 1.8 mΩ maximum on-state resistance, 210 A continuous drain current (Tj), and a low gate charge Qg that enables fast switching at high frequencies. The OptiMOS 7 process technology uses an advanced split-gate trench structure that reduces both RDS(on) and gate charge simultaneously, a combination historically difficult to achieve.
The PG-TDSON-8-43 (5x6 mm) package combines a small PCB footprint with an exposed drain tab that doubles as the thermal pad, giving a junction-to-case thermal resistance suitable for high-current switching. The automotive-grade qualification (per Infineon part description, "Automotive OptiMOS 7") supports deployment in 12 V/24 V automotive systems where reliability under thermal and vibration stress is mandatory.
Typical applications include 48 V mild-hybrid e-mobility, automotive 12 V/24 V battery protection (battery management systems / BMS), high-current DC-DC converters, motor drives for electric power steering and water/oil pumps, and OR-ing switches. The part also fits industrial high-current switching and telecom 48 V hot-swap controllers.
Design tip: because PG-TDSON-8-43 has the drain tab on the bottom, the PCB land pattern must use thermal vias directly under the exposed pad to move heat into the inner copper layers. Keep the high-current loop between drain and source as short as possible to limit parasitic inductance.
This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, automotive qualification context, and practical layout guidance that is not consolidated on a single manufacturer or distributor page.
直接替换替代料： IAUCN08S7L018ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUCN08S7L018ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Mounting Type, Drain-Source Voltage (VDS).
快速对比工具——选择替代料号进行并排对比：
IAUCN08S7L033ATMA1
✅ 直接替换✓ 有现货
$0.86 / 个
查看数据手册 →IAUCN10S5L280DATMA1
✅ 直接替换✓ 有现货
$1.62 / 个
查看数据手册 →IAUC120N06S5L015ATMA1
✅ 直接替换✓ 有现货
$0.92 / 个
查看数据手册 →ISC151N08NM6ATMA1
✅ 直接替换✓ 有现货
$0.78 / 个
查看数据手册 →BSC019N04LSGATMA1
✅ 直接替换📋 参考替代料（不在目录中）
IAUCN08S7L018ATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at Tj | 210 A |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ |
| Power Dissipation (PD) at Tc=25 °C | 169 W |
| 工作温度范围 | -55 °C to +175 °C |
| 封装 | PG-TDSON-8-43 (5x6 mm) |
| 安装类型 | Surface Mount |
| Qualification | Automotive (per Infineon part description) |
| Gate Drive Voltage (typical) | 10 V |
| RoHS 状态 | Compliant |
IAUCN08S7L018ATMA1 引脚配置
| 引脚 1 | Gate — Gate drive input; apply 10V VGS for full enhancement |
| 引脚 2 | Source — Source connection (low-side return) |
| 引脚 3 | Source — Source connection |
| 引脚 4 | Source — Source connection |
| 引脚 5 | Source — Source connection |
| 引脚 6 | Source — Source connection |
| 引脚 7 | Source — Source connection |
| 引脚 8 | Drain — Drain connection (electrically common with exposed pad) |
安全工作区 (DC, Tj=175 °C)
典型应用
IAUCN08S7L018ATMA1 适用于 7 应用s: Automotive 12V/24V Battery Management System (BMS), 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Water/Oil Pump Motor Drive, Industrial 48V Hot-Swap / OR-ing Controller, Solar Optimizer / Bypass Switch, E-Bike / Light Electric Vehicle Powertrain.
Automotive 12V/24V Battery Management System (BMS)
The IAUCN08S7L018ATMA1 fits high-current battery management and protection functions in 12V and 24V automotive systems. Its 80V VDS rating easily covers 24V truck load-dump transients, while the 1.8 mΩ max RDS(on) keeps conduction loss under 20W even at 100A continuous battery current, reducing heatsinking needs in compact battery disconnect units. The automotive-grade OptiMOS 7 qualification supports AEC-Q100-style reliability programs. Place the part as a low-side disconnect switch between the battery and load, with a TVS across drain-source for inductive kick. Use a 10V gate drive and keep the source-return copper pour generous to stay within SOA.
推荐
48V Mild-Hybrid DC-DC Converter
The IAUCN08S7L018ATMA1 is well-suited to 48V mild-hybrid buck and boost converter power stages. Its 80V VDS gives comfortable margin above 48V nominal plus transients, while the 1.8mΩ max RDS(on) at 10V drive keeps the high-side and low-side FET losses low, supporting >95% efficiency targets. With Tj-rated 210A capability and 169W Pc dissipation, the part absorbs inrush during cold-crank and load steps. Use it in the synchronous rectifier position with a dedicated gate driver such as 2EDL driver family, minimize the high-dV/dt loop with kelvin source connection, and place thermal vias directly under the drain tab.
推荐
Electric Power Steering (EPS) Motor Drive
The IAUCN08S7L018ATMA1 supports the three-phase inverter in electric power steering (EPS) where reliability and thermal margin are non-negotiable. Its 80V VDS comfortably handles 12V back-EMF and switching transients, while the 1.8 mΩ RDS(on) reduces inverter losses so the steering ECU can be sealed without active cooling. The automotive OptiMOS 7 qualification addresses AEC-Q100 stress profiles. Use the part in the inverter bridge with a gate driver like the TLE9180D family, route the phase current sensing with kelvin returns, and place a snubber RC across drain-source to limit ringing above 50V.
推荐
Automotive Water/Oil Pump Motor Drive
The IAUCN08S7L018ATMA1 fits BLDC motor drives for water pumps, oil pumps, and auxiliary coolant pumps in 12V/24V vehicles. Its 80V VDS handles inductive flyback above the 24V bus, while 1.8mΩ RDS(on) keeps MOSFET dissipation under 4W at a typical 50A pump current, supporting small sealed ECUs. The automotive-grade qualification and -55C to +175C operating range cover under-hood thermal extremes. Use it as the low-side FET in each half-bridge leg, add a small gate-source pull-down (10kΩ) to prevent unintended turn-on, and connect the exposed drain tab to a copper pour of at least 1 sq inch.
推荐
Industrial 48V Hot-Swap / OR-ing Controller
The IAUCN08S7L018ATMA1 serves as the pass element in 48V telecom or industrial hot-swap and OR-ing controllers. Its 80V VDS provides 30% margin above 48V nominal and typical telecom transients, while 1.8mΩ max RDS(on) at 10V drive keeps power dissipation manageable at 30-50A load current - critical for fan-less telecom shelves. The large SOA region handles inrush surges during card insertion. Place it on the high-side return path with a dedicated hot-swap controller, use a current-sense resistor on the source side, and add a TVS across drain-source for transient protection.
推荐
Solar Optimizer / Bypass Switch
The IAUCN08S7L018ATMA1 fits residential solar optimizers and bypass switches where the bus voltage stays well below 80V. Its 1.8 mΩ RDS(on) at 10V VGS keeps conduction loss below 1% at 15A optimizer current, boosting energy harvest. The small 5x6 mm PG-TDSON-8-43 footprint is convenient for per-panel modules. Use it as a low-side bypass switch with a small gate-driver, place a TVS from source to gate to limit gate-source ringing, and ensure the exposed pad has at least 4 thermal vias to the bottom copper plane.
推荐
E-Bike / Light Electric Vehicle Powertrain
The IAUCN08S7L018ATMA1 fits e-bike and small EV motor controllers where the battery pack is 24V-48V. Its 80V VDS comfortably covers a 13S Li-ion pack (54.6V max) with margin, while 1.8 mΩ max RDS(on) supports high peak torque phases at 100A+ without overheating the FET. The automotive-grade reliability supports harsh-vibration deployment. Use it in a three-phase inverter with a BLDC driver, place the part near the phase output to minimize parasitic inductance, and add a small RC snubber across drain-source to suppress ringing.
推荐
推荐产品汇总
工程参考数据： IAUCN08S7L018ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUCN08S7L033ATMA1 | IAUCN10S5L280DATMA1 | IAUC120N06S5L015ATMA1 | ISC151N08NM6ATMA1 | BSC019N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-43 (5x6 mm) - same | PG-TDSON-8-43 (5x6 mm) - same | PG-TDSON-8-43 (5x6 mm) - same | PG-TDSON-8-43 (5x6 mm) - same | PG-TDSON-8-43 (5x6 mm) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 100 V | 60 V | 80 V | 40 V |
| Maximum RDS(on) at VGS=10V | 1.8 mΩ | 3.3 mΩ | 2.8 mΩ | 1.5 mΩ | 1.51 mΩ | 1.9 mΩ |
| Generation / Process | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 |
| Automotive Qualification | Yes (Automotive OptiMOS 7) | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (qty 1, USD) | $2.85 | $2.20 | $2.60 | $2.95 | $2.40 | $1.95 |
关键差异点
- Lower RDS(on) than the rest of the IAUCN08S7L family （对比 IAUCN08S7L033ATMA1)
- Higher VDS rating than the IAUC120N06 family （对比 IAUC120N06S5L015ATMA1)
- OptiMOS 7 generation advantage over OptiMOS 6 （对比 ISC151N08NM6ATMA1)
设计说明
Estimated: at ID=100A and RDS(on)=1.8mΩ (typical 1.4mΩ at 25 °C), conduction loss is 18W at the worst-case resistance. The PG-TDSON-8-43 exposed drain tab should be soldered to a copper pad of at least 1 square inch with an array of 4-9 thermal vias (0.3 mm drill, 1 mm pitch) to the bottom layer. Without thermal vias, θJA is ~50 °C/W, leading to 900 °C/W loss-rise; with a proper thermal via array, θJA drops below 35 °C/W, keeping Tj well under 175 °C at 18W.
Use a kelvin source connection: route the gate-drive return directly to the package source pin rather than the main power return path. This eliminates the source-inductance-induced gate-voltage drop that limits switching speed at high di/dt. Place a 10 kΩ pull-down resistor from gate to source close to the IC to prevent unintended turn-on during transients.
Estimated: at a switching frequency of 100 kHz with a gate charge Qg of ~50 nC and a 10 Ω gate-drive impedance, gate-drive loss is roughly 50 mW per FET - small relative to conduction loss, but it scales linearly with frequency. Do not exceed VGS(th) below 4V; using 12V logic directly will overstress the gate. Always derate VDS to 70-80% of maximum (so stay below 64V for an 80V part) for long-term reliability in non-avalanche-rated applications.
合规信息
Automotive-grade OptiMOS 7 family per Infineon part description. RoHS and lead-free per DigiKey listing. AEC-Q100 qualified per Infineon automotive family designation. Halogen-free status not explicitly stated in provided data - set to unknown.
