IAUCN08S7L018ATMA1 vs IAUCN10S5L280DATMA1 对比
详细并排对比 IAUCN08S7L018ATMA1 出自 Infineon 和 IAUCN10S5L280DATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN08S7L018ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 Trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| 工作温度范围 | -55 °C to +175 °C | -55C to +175C (junction) |
| 封装 | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-61 (SSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| 引脚数量 | — | 8 |
| Packing | — | Tape & Reel (T&R) |