IAUCN08S7L018ATMA1 vs IAUCN10S5L280DATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L018ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN08S7L018ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 Trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| Operating Temperature Range | -55 °C to +175 °C | -55C to +175C (junction) |
| Package | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-61 (SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Pin Count | — | 8 |
| Packing | — | Tape & Reel (T&R) |