IAUCN08S7L018ATMA1 vs IAUCN10S5L280DATMA1 Comparison

Detailed side-by-side comparison of IAUCN08S7L018ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L018ATMA1

IAUCN08S7L018ATMA1 - 80V 1.8mΞ© OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 βœ“ Active
Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN08S7L018ATMA1 IAUCN10S5L280DATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 5
Technology N-Channel Trench MOSFET OptiMOS 5 Trench MOSFET
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Tj 210 A β€”
Continuous Drain Current (ID) at Tc [DATA_NEEDED: ID at Tc] β€”
Maximum RDS(on) at VGS=10 V 1.8 mΞ© β€”
Power Dissipation (PD) at Tc=25 Β°C 169 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55C to +175C (junction)
Package PG-TDSON-8-43 (5x6 mm) PG-TDSON-8-61 (SSO8)
Mounting Type Surface Mount Surface Mount
Qualification Automotive (per Infineon part description) β€”
Gate Drive Voltage (typical) 10 V β€”
MSL Level [DATA_NEEDED: MSL level] 1
RoHS Status Compliant Compliant
Configuration β€” Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) β€” 100 V
Continuous Drain Current (Id) at Tj β€” 23 A
Power Dissipation (Pd) at Tc β€” 38 W
Automotive Qualified β€” Yes (AEC-Q101, IAU prefix)
Pin Count β€” 8
Packing β€” Tape & Reel (T&R)

Datasheets & Resources

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