IAUCN10S5L280DATMA1 vs IAUC120N06S5N011ATMA1 对比
详细并排对比 IAUCN10S5L280DATMA1 出自 Infineon 和 IAUC120N06S5N011ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN10S5L280DATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS-5 |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| 封装 | PG-TDSON-8-61 (SSO8) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | — |
| 工作温度范围 | -55C to +175C (junction) | -55°C to +175°C (Tj) |
| 引脚数量 | 8 | — |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | — |
| Packing | Tape & Reel (T&R) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 120 A (Tc=25°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | — | 310 A (Tj) |
| On-Resistance Rds(on) max | — | 1.1 mΩ at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | — | 188 W (Tc=25°C) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |