IAUCN10S5L280DATMA1 vs IAUCN10S5L110TATMA1 对比
详细并排对比 IAUCN10S5L280DATMA1 出自 Infineon 和 IAUCN10S5L110TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN10S5L280DATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $2.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| 封装 | PG-TDSON-8-61 (SSO8) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | N-Channel MOSFET, Trench, Logic Level |
| 工作温度范围 | -55C to +175C (junction) | — |
| 引脚数量 | 8 | — |
| MSL 等级 | 1 | MSL1 (260°C peak reflow) |
| RoHS 状态 | Compliant | Compliant |
| Packing | Tape & Reel (T&R) | — |
| Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| 工作结温 | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |