IAUCN10S5L280DATMA1 vs IAUCN10S5L110TATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUCN10S5L110TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active
Infineon
IAUCN10S5L110TATMA1

IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon

IAUCN10S5L110TATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S5L280DATMA1 IAUCN10S5L110TATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $2.08
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 β€”
Configuration Dual N-Channel MOSFET Array β€”
Drain-Source Voltage (Vds) 100 V β€”
Continuous Drain Current (Id) at Tj 23 A β€”
Power Dissipation (Pd) at Tc 38 W β€”
Package PG-TDSON-8-61 (SSO8) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) β€”
Technology OptiMOS 5 Trench MOSFET N-Channel MOSFET, Trench, Logic Level
Operating Temperature Range -55C to +175C (junction) β€”
Pin Count 8 β€”
MSL Level 1 MSL1 (260Β°C peak reflow)
RoHS Status Compliant Compliant
Packing Tape & Reel (T&R) β€”
Series β€” OptiMOS 5
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tj β€” 61 A
On-Resistance RDS(on) max at VGS=10V β€” 11.3 mΞ©
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc β€” 88 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Storage Temperature β€” [DATA_NEEDED: storage temperature]
Avalanche Rated β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101 Extended Qualification

Datasheets & Resources

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