IGLR70R200D2SXUMA1 vs IGLD60R070D1AUMA3 对比
详细并排对比 IGLR70R200D2SXUMA1 出自 Infineon 和 IGLD60R070D1AUMA3 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IGLR70R200D2SXUMA1 | IGLD60R070D1AUMA3 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.24 | $5.10 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN G5 | — |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | 15 A |
| Power Dissipation (PD, Tc) | 34 W | 114 W |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | [DATA_NEEDED: Qg total] |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| 工作温度范围 | -40 °C to +150 °C | — |
| 封装 | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-LSON-8-1 (LSON-8 with exposed pad) |
| RoHS | Compliant | — |
| On-Resistance (RDS(on)) | — | 70 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | Near zero (GaN technology) |
| Input Capacitance (Ciss) | — | 380 pF @ 400 V (per Utmel) |
| 安装类型 | — | Surface Mount |
| MSL 等级 | — | 3 |
| 无卤 | — | Yes |
| RoHS 状态 | — | Compliant |
| Operating Temperature (Tj) | — | [DATA_NEEDED: Tj max] |
| Series | — | CoolGaN™ |
| Polarity | — | N-Channel |
| Packaging | — | Tape & Reel |
| Factory Pack Quantity | — | 3000 |