IGLR70R200D2SXUMA1 vs IGLD60R070D1AUMA3 Comparison
Detailed side-by-side comparison of IGLR70R200D2SXUMA1 by Infineon and IGLD60R070D1AUMA3 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGLR70R200D2SXUMA1 | IGLD60R070D1AUMA3 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN G5 | — |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | 15 A |
| Power Dissipation (PD, Tc) | 34 W | 114 W |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | [DATA_NEEDED: Qg total] |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Operating Temperature Range | -40 °C to +150 °C | — |
| Package | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-LSON-8-1 (LSON-8 with exposed pad) |
| RoHS | Compliant | — |
| On-Resistance (RDS(on)) | — | 70 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | Near zero (GaN technology) |
| Input Capacitance (Ciss) | — | 380 pF @ 400 V (per Utmel) |
| Mounting Type | — | Surface Mount |
| MSL Level | — | 3 |
| Halogen Free | — | Yes |
| RoHS Status | — | Compliant |
| Operating Temperature (Tj) | — | [DATA_NEEDED: Tj max] |
| Series | — | CoolGaN™ |
| Polarity | — | N-Channel |
| Packaging | — | Tape & Reel |
| Factory Pack Quantity | — | 3000 |