IGT65R025D2ATMA1 vs IGLR70R200D2SXUMA1 对比
详细并排对比 IGT65R025D2ATMA1 出自 Infineon 和 IGLR70R200D2SXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IGT65R025D2ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.55 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) | CoolGaN G5 |
| 晶体管类型 | N-Channel GaN HEMT, enhancement-mode | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id, Tc) | 70 A | — |
| Power Dissipation (Pd, Tc) | 236 W | — |
| On-State Resistance (Rds(on)) | 25 mΩ (typical, per MPN suffix) | — |
| 封装 | PG-HSOF-8 (source-down, bottom-cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| 安装类型 | Surface Mount | — |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| 工作温度范围 | -55C to +150C (junction, typical) | -40 °C to +150 °C |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap | GaN HEMT (E-mode, enhancement-mode) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss typical value] | — |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |