IGT65R025D2ATMA1 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IGT65R025D2ATMA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGT65R025D2ATMA1
IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon
IGT65R025D2ATMA1 β ActiveInfineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveSpecification Comparison
| Parameter | IGT65R025D2ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.55 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) | CoolGaN G5 |
| Transistor Type | N-Channel GaN HEMT, enhancement-mode | β |
| Drain-Source Voltage (Vdss) | 650 V | β |
| Continuous Drain Current (Id, Tc) | 70 A | β |
| Power Dissipation (Pd, Tc) | 236 W | β |
| On-State Resistance (Rds(on)) | 25 mΞ© (typical, per MPN suffix) | β |
| Package | PG-HSOF-8 (source-down, bottom-cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | β |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Operating Temperature Range | -55C to +150C (junction, typical) | -40 Β°C to +150 Β°C |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap | GaN HEMT (E-mode, enhancement-mode) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss typical value] | β |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 700 V |
| Continuous Drain Current (ID, Tc) | β | 9.3 A |
| Power Dissipation (PD, Tc) | β | 34 W |
| On-Resistance (RDS(on), max) | β | 200 mΞ© |
| Total Gate Charge (Qg) | β | 1.26 nC |
| Output Capacitance (Coss) | β | 91 pF |
| Reverse Transfer Capacitance (Crss) | β | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.2 V |
| RoHS | β | Compliant |