IPB020N10N5LFATMA1 vs IPB020N10N5ATMA1 对比
详细并排对比 IPB020N10N5LFATMA1 出自 Infineon 和 IPB020N10N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ 量产中规格对比
| 参数 | IPB020N10N5LFATMA1 | IPB020N10N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.62 | $3.30 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Linear FET | — |
| Technology | N-Channel Enhancement-Mode Power MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (Tc) | 176 A | — |
| Silicon-Limited Drain Current | 289 A | — |
| Package-Limited Drain Current | 120 A | — |
| Pulsed Drain Current (VDS=56V, tp=10ms) | 10.2 A | — |
| On-State Resistance RDS(on) max | 2.0 mΩ | — |
| Total Power Dissipation (Tc) | 313 W | — |
| 封装 | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK-3) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +175 °C | -55C to +175C |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Marking Code | 020N10LF | — |
| Part Number | — | IPB020N10N5ATMA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Maximum Drain Current (ID max, per Infineon product page) | — | 176 A |
| On-Resistance RDS(on) max | — | 2 mΩ |
| Power Dissipation (PD) at Tc | — | 375 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Channel Type | — | N-Channel |
| Packaging | — | Tape & Reel (ATMA1 suffix) |