IPB100N12S305ATMA1 vs IPB60R280P7ATMA1 对比
详细并排对比 IPB100N12S305ATMA1 出自 Infineon 和 IPB60R280P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB100N12S305ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.25 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power MOSFET | CoolMOS P7 (600 V) |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) | 100 A (Tc) | — |
| Power Dissipation (PD) | 300 W (Tc) | — |
| On-Resistance (RDS(on)) | 4.8 mOhm (typical) | — |
| Total Gate Charge (Qg) | 185 nC | — |
| 工作温度范围 | -55 C to +175 C (TJ) | -55 °C to +150 °C (T_j max) |
| 封装 / 外壳 | PG-TO263-3-1 (D2PAK, surface mount) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 3 (Gate, Drain, Source) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| 湿敏等级（MSL） | MSL1 (up to 260 C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Technology | — | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| 封装 | — | PG-TO263-3 (D2PAK) |
| 引脚数量 | — | 3 (2 + Tab) |
| Configuration | — | Single N-Channel |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |