IPB200N25N3GATMA1 vs IPB120P04P4L03ATMA2 对比
详细并排对比 IPB200N25N3GATMA1 出自 Infineon 和 IPB120P04P4L03ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ 量产中规格对比
| 参数 | IPB200N25N3GATMA1 | IPB120P04P4L03ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.65 | $1.74 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| 封装 | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | — |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | — |
| Technology | OptiMOS 3 (Trench) | — |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| 工作温度范围 | -55C to +175C | — |
| RoHS 状态 | Compliant | Compliant (per Infineon product page) |
| 无卤 | Yes (per Infineon OptiMOS family datasheet) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| 引脚数量 | 3 (2+tab) | 3 (Gate, Drain, Source) |
| Transistor Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| 工作结温 | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |