IPB200N25N3GATMA1 vs IPB120P04P4L03ATMA2 Comparison
Detailed side-by-side comparison of IPB200N25N3GATMA1 by Infineon and IPB120P04P4L03ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ ActiveSpecification Comparison
| Parameter | IPB200N25N3GATMA1 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 | — |
| Transistor Type | N-Channel MOSFET | — |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V | — |
| Continuous Drain Current (I_D) at T_C | 64 A | — |
| Power Dissipation (P_D) at T_C | 300 W | — |
| R_DS(on) max at V_GS=10V | 20 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/max] | — |
| Technology | OptiMOS 3 (Trench) | — |
| Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical] | — |
| Operating Temperature Range | -55C to +175C | — |
| RoHS Status | Compliant | Compliant (per Infineon product page) |
| Halogen Free | Yes (per Infineon OptiMOS family datasheet) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Pin Count | 3 (2+tab) | 3 (Gate, Drain, Source) |
| Transistor Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Operating Junction Temperature | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |