IPD50N06S409ATMA2 vs IPD053N06NATMA1 对比
详细并排对比 IPD50N06S409ATMA2 出自 Infineon 和 IPD053N06NATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD50N06S409ATMA2 | IPD053N06NATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.52 |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK-2), Surface Mount |
| 引脚数量 | 3 (2 + Tab) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 60V |
| Transistor Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Continuous Drain Current (ID, Tc) | — | 45 A |
| Continuous Drain Current (ID, Ta) | — | 18 A |
| On-State Resistance (RDS(on), max) | — | 5.3 mOhm @ VGS=10V |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| 工作温度范围 | — | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] |