IPD50N06S409ATMA2 vs IPD053N06NATMA1 Comparison

Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD053N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD053N06NATMA1 IPD053N06NATMA1 - 60V 45A N-Ch OptiMOS 5 MOSFET | Infineon

IPD053N06NATMA1 - 60V 45A N-Ch OptiMOS 5 MOSFET | Infineon

IPD053N06NATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N06S409ATMA2 IPD053N06NATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $0.52
Technology N-Channel MOSFET (OptiMOS) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 50 A β€”
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Power Dissipation (Pd) at Tc 71 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TO252-3-11 (DPAK) PG-TO252-3 (DPAK-2), Surface Mount
Pin Count 3 (2 + Tab) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free [DATA_NEEDED] β€”
Manufacturer β€” Infineon Technologies
Product Series β€” OptiMOS 5 60V
Transistor Polarity β€” N-Channel
Gate-Source Voltage (VGS) β€” +/- 20 V
Continuous Drain Current (ID, Tc) β€” 45 A
Continuous Drain Current (ID, Ta) β€” 18 A
On-State Resistance (RDS(on), max) β€” 5.3 mOhm @ VGS=10V
Power Dissipation (Tc) β€” 83 W
Power Dissipation (Ta) β€” 3 W
Operating Temperature Range β€” -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet]

Datasheets & Resources

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