IPD50N06S409ATMA2 vs IPD053N06NATMA1 Comparison
Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD053N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50N06S409ATMA2 | IPD053N06NATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK-2), Surface Mount |
| Pin Count | 3 (2 + Tab) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 60V |
| Transistor Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Continuous Drain Current (ID, Tc) | — | 45 A |
| Continuous Drain Current (ID, Ta) | — | 18 A |
| On-State Resistance (RDS(on), max) | — | 5.3 mOhm @ VGS=10V |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Operating Temperature Range | — | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] |