IPD50N06S409ATMA2 vs IPD11DP10NMATMA1 对比
详细并排对比 IPD50N06S409ATMA2 出自 Infineon 和 IPD11DP10NMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD50N06S409ATMA2 | IPD11DP10NMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.62 |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS™ Trench |
| Drain-Source Voltage (VDS) | 60 V | -100 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V (typ at 1.7 mA) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| 引脚数量 | 3 (2 + Tab) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (Ta) | — | 3.4 A |
| Continuous Drain Current (Tc) | — | 22 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 125 W |
| On-Resistance RDS(on) max at VGS=10V | — | 111 mΩ |
| On-Resistance RDS(on) at ID=18A, VGS=10V | — | 111 mΩ |
| Total Gate Charge (Qg) at VGS=10V | — | 74 nC |
| Input Capacitance (Ciss) | — | 230 pF |
| Output Capacitance (Coss) | — | 63 pF |
| 工作温度范围 | — | -55 °C to +175 °C |