IPD50N06S409ATMA2 vs IPD11DP10NMATMA1 Comparison
Detailed side-by-side comparison of IPD50N06S409ATMA2 by Infineon and IPD11DP10NMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD50N06S409ATMA2 | IPD11DP10NMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS™ Trench |
| Drain-Source Voltage (VDS) | 60 V | -100 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V (typ at 1.7 mA) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Pin Count | 3 (2 + Tab) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (Ta) | — | 3.4 A |
| Continuous Drain Current (Tc) | — | 22 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 125 W |
| On-Resistance RDS(on) max at VGS=10V | — | 111 mΩ |
| On-Resistance RDS(on) at ID=18A, VGS=10V | — | 111 mΩ |
| Total Gate Charge (Qg) at VGS=10V | — | 74 nC |
| Input Capacitance (Ciss) | — | 230 pF |
| Output Capacitance (Coss) | — | 63 pF |
| Operating Temperature Range | — | -55 °C to +175 °C |