IPD60R360P7SAUMA1 vs IPL60R105P7AUMA1 对比
详细并排对比 IPD60R360P7SAUMA1 出自 Infineon 和 IPL60R105P7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 量产中规格对比
| 参数 | IPD60R360P7SAUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC | 9 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) | — |
| Power Dissipation (PD) at TC | 41 W | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| 封装 / 外壳 | PG-TO252-3 (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 3 | — |
| 工作温度范围 | -55C to +150C (junction) | -55C to +150C |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Channel Type | N-Channel | N-Channel |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| 封装 | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| 无卤 | — | Yes |
| Lead-Free | — | Yes |