IPD60R360P7SAUMA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IPD60R360P7SAUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActiveSpecification Comparison
| Parameter | IPD60R360P7SAUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC | 9 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) | — |
| Power Dissipation (PD) at TC | 41 W | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Package / Case | PG-TO252-3 (DPAK) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | — |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Channel Type | N-Channel | N-Channel |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Package | — | PG-VSON-4 (4-pin SMD with exposed pad) |
| Halogen Free | — | Yes |
| Lead-Free | — | Yes |