IPD90P04P4L04ATMA2 vs IPD90P04P405ATMA2 对比

详细并排对比 IPD90P04P4L04ATMA2 出自 Infineon 和 IPD90P04P405ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD90P04P4L04ATMA2 IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 ✓ 量产中
Infineon
IPD90P04P405ATMA2 IPD90P04P405ATMA2 - P-Channel 40V 90A OptiMOS MOSFET | Infineon

IPD90P04P405ATMA2 - P-Channel 40V 90A OptiMOS MOSFET | Infineon

IPD90P04P405ATMA2 ✓ 量产中

规格对比

参数 IPD90P04P4L04ATMA2 IPD90P04P405ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.22 $0.69
Part Number IPD90P04P4L04ATMA2 —
Manufacturer Infineon Technologies —
Family OptiMOS-P2 —
Channel Type P-Channel —
Drain-Source Voltage (Vds) -40 V —
Continuous Drain Current (Id) at Tc=25C -90 A —
Power Dissipation (Pd) at Tc=25C 125 W —
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Maximum Junction Temperature 175 C —
工作温度范围 -55 C to +175 C -55 °C to +175 °C (Tj)
封装 PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK, surface mount)
安装类型 Surface Mount Surface Mount
引脚数 3 (2 + Tab) —
Automotive Qualification AEC-Q101 qualified —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Polarity — P-Channel
Drain-Source Voltage (VDS) — -40 V
Continuous Drain Current (ID, Tc) — -90 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) — 125 W
On-Resistance RDS(on) at VGS = -10 V — 4.7 mΩ (typical)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
引脚数量 — 3 (Gate, Drain, Source)
Process Technology — OptiMOS-P2 (trench + field plate)

数据手册与资源

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