IPG16N10S4L61AATMA1 vs BSC019N04LSTATMA1 对比
详细并排对比 IPG16N10S4L61AATMA1 出自 Infineon 和 BSC019N04LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
IPG16N10S4L61AATMA1 ✓ 量产中规格对比
| 参数 | IPG16N10S4L61AATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.12 | $1.21 |
| FET Type | Dual N-Channel (Array) | — |
| Technology | Logic-Level, Enhancement Mode | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at 25C | 16 A | — |
| Power Dissipation (PD) | 29 W | — |
| 封装 / 外壳 | PG-TDSON-8-10 (Wettable Flank) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +175C (TJ) | — |
| 湿敏等级（MSL） | MSL1 (unlimited floor life at <30C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| FET Feature | Logic Level Gate | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| 工作温度范围 | — | -55 C to +150 C |
| 封装 | — | TDSON-8 (SuperSO8) 5x6 mm |
| MSL 等级 | — | 1 (unlimited) |
| RoHS 状态 | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |