IPG16N10S4L61AATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of IPG16N10S4L61AATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPG16N10S4L61AATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type Dual N-Channel (Array) —
Technology Logic-Level, Enhancement Mode OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at 25C 16 A —
Power Dissipation (PD) 29 W —
Package / Case PG-TDSON-8-10 (Wettable Flank) —
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C (TJ) —
Moisture Sensitivity Level (MSL) MSL1 (unlimited floor life at <30C / 85% RH) —
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant (Green Product) —
Avalanche Tested 100% (per datasheet) —
AOI Compatible Yes (Wettable Flank) —
FET Feature Logic Level Gate —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Operating Temperature Range — -55 C to +150 C
Package — TDSON-8 (SuperSO8) 5x6 mm
MSL Level — 1 (unlimited)
RoHS Status — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

Datasheets & Resources

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