IPN95R1K2P7ATMA1 vs IPN95R3K7P7ATMA1 对比

详细并排对比 IPN95R1K2P7ATMA1 出自 Infineon 和 IPN95R3K7P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ 量产中

规格对比

参数 IPN95R1K2P7ATMA1 IPN95R3K7P7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $0.44
FET Type N-Channel —
Technology CoolMOS P7 (Super Junction) Super-junction (CoolMOS P7)
Drain-to-Source Voltage (V_DSS) 950 V —
Continuous Drain Current (I_D) at T_C 6 A —
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) —
Gate Drive Voltage (max R_DS(on)) 10 V —
Power Dissipation (T_C) 7 W —
封装 SOT-223-3 (PG-SOT223) PG-SOT223 (3-pin + tab, surface mount)
安装类型 Surface Mount Surface Mount
引脚数量 3 (2 + Tab) —
Series CoolMOS P7 CoolMOS P7
工作温度范围 -55C to +150C —
Packaging Tape & Reel —
RoHS 状态 Compliant Compliant
Part Status Active —
Manufacturer — Infineon Technologies
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 950 V
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
工作结温 — -55 C to +150 C
Lead-Free — Yes
MSL 等级 — [DATA_NEEDED: MSL rating]

数据手册与资源

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