IPN95R1K2P7ATMA1 vs IPN95R3K7P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN95R1K2P7ATMA1 von Infineon und IPN95R3K7P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPN95R1K2P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,44 |
| FET Type | N-Channel | — |
| Technology | CoolMOS P7 (Super Junction) | Super-junction (CoolMOS P7) |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| Gehäuse | SOT-223-3 (PG-SOT223) | PG-SOT223 (3-pin + tab, surface mount) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | CoolMOS P7 |
| Betriebstemperaturbereich | -55C to +150C | — |
| Packaging | Tape & Reel | — |
| RoHS-Status | Compliant | Compliant |
| Part Status | Active | — |
| Manufacturer | — | Infineon Technologies |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 950 V |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Betriebs-Sperrschichttemperatur | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |