IPTC039N15NM5ATMA1 vs IQE220N15NM5CGSCATMA1 对比
详细并排对比 IPTC039N15NM5ATMA1 出自 Infineon 和 IQE220N15NM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ 量产中
规格对比
| 参数 | IPTC039N15NM5ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.05 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| Continuous Drain Current (ID) at Tc | 190 A | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 319 W | — |
| On-Resistance RDS(on) typical | 3.9 mOhm | — |
| Gate Charge Qg typical | 74 nC | — |
| Maximum Gate-Source Voltage (VGS) | 20 V | — |
| 工作温度 | -55 C to +175 C (junction) | — |
| 封装 | PG-HDSOP-16-2 (top-side cooled) | PG-WHTFN-9 (Source-Down) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench | OptiMOS 5, Source-Down |
| Cooling | Top-side cooled (case above PCB) | — |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |
| 工作温度范围 | — | -55C to +150C (junction) |