IPTC039N15NM5ATMA1 vs IQE220N15NM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IPTC039N15NM5ATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE220N15NM5CGSCATMA1

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IPTC039N15NM5ATMA1 IQE220N15NM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.05 $2.18
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 5
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Ta 21 A β€”
Continuous Drain Current (ID) at Tc 190 A β€”
Power Dissipation (PD) at Ta 3.8 W β€”
Power Dissipation (PD) at Tc 319 W β€”
On-Resistance RDS(on) typical 3.9 mOhm β€”
Gate Charge Qg typical 74 nC β€”
Maximum Gate-Source Voltage (VGS) 20 V β€”
Operating Temperature -55 C to +175 C (junction) β€”
Package PG-HDSOP-16-2 (top-side cooled) PG-WHTFN-9 (Source-Down)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench OptiMOS 5, Source-Down
Cooling Top-side cooled (case above PCB) β€”
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Continuous Drain Current at Ta (ID) β€” 7 A
Continuous Drain Current at Tc (ID) β€” 44 A
Power Dissipation at Ta (PD) β€” 2.5 W
Power Dissipation at Tc (PD) β€” 100 W
On-Resistance (RDS(on)) β€” 22 milliohm (max)
Gate Threshold Voltage (VGS(th)) β€” 4.6 V
Operating Temperature Range β€” -55C to +150C (junction)

Datasheets & Resources

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