IQD016N08NM5ATMA1 vs IQDH29NE2LM5CGSCATMA1 对比
详细并排对比 IQD016N08NM5ATMA1 出自 Infineon 和 IQDH29NE2LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQD016N08NM5ATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.68 | $1.84 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 25 V |
| Continuous Drain Current (Ta) | 31 A | 75 A |
| Continuous Drain Current (Tc) | 323 A | 789 A |
| On-Resistance RDS(on) typical | 1.6 mΩ | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 278 W |
| 封装 | PG-TSON-8-9 (PQFN 5x6) | PG-WHTFN-9-U02 (WHTFN EP) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | OptiMOS 5 Power-Transistor |
| 工作温度范围 | -55C to +150C (junction, standard MOSFET rating) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | 2 V (typ) |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | — |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| 引脚数量 | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |