IQD016N08NM5ATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQD016N08NM5ATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD016N08NM5ATMA1
IQD016N08NM5ATMA1 - 80V 1.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IQD016N08NM5ATMA1 β ActiveInfineon
IQDH29NE2LM5CGSCATMA1
IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon
IQDH29NE2LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQD016N08NM5ATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $1.84 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 25 V |
| Continuous Drain Current (Ta) | 31 A | 75 A |
| Continuous Drain Current (Tc) | 323 A | 789 A |
| On-Resistance RDS(on) typical | 1.6 mΞ© | β |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 278 W |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-WHTFN-9-U02 (WHTFN EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 Power-MOSFET | OptiMOS 5 Power-Transistor |
| Operating Temperature Range | -55C to +150C (junction, standard MOSFET rating) | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | 2 V (typ) |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Maximum On-Resistance RDS(on) | β | 0.29 mΞ© |
| Pin Count | β | 9 |
| Cooling | β | Dual-side exposed pad (top + bottom) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |