IQDH35N03LM5SCATMA1 vs BSZ068N06NSATMA1 对比
详细并排对比 IQDH35N03LM5SCATMA1 出自 Infineon 和 BSZ068N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQDH35N03LM5SCATMA1 | BSZ068N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $0.62 |
| Manufacturer | Infineon Technologies | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS 5 (trench-gate) |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| 封装 | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C | -55 °C to +150 °C |
| MSL 等级 | 1 (unlimited) | MSL1 |
| RoHS 状态 | Compliant | — |
| Marking | IQDH35N03LM5S | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID at Ta] |
| On-Resistance RDS(on) max | — | 6.8 mΩ @ VGS=10 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 46 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |