IQDH88N06LM5SCATMA1 vs IQDH29NE2LM5CGSCATMA1 对比
详细并排对比 IQDH88N06LM5SCATMA1 出自 Infineon 和 IQDH29NE2LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ 量产中规格对比
| 参数 | IQDH88N06LM5SCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.55 | $1.84 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IQDH88N06LM5SCATMA1 | — |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID, Ta) | 42 A | — |
| Continuous Drain Current (ID, Tc) | 447 A | — |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V | — |
| Total Gate Charge (Qg) | 76 nC | — |
| Input Capacitance (Ciss) | 11 nF | — |
| Output Capacitance (Coss) | 2 nF | — |
| Reverse Transfer Capacitance (Crss) | 95 pF | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 278 W |
| 工作温度范围 | -55 C to +175 C | — |
| 封装 | PG-WHSON-8-U02 (source-down, dual-side cooling) | PG-WHTFN-9-U02 (WHTFN EP) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| 引脚数量 | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |