IQDH88N06LM5SCATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQDH88N06LM5SCATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH88N06LM5SCATMA1

IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon

IQDH88N06LM5SCATMA1 βœ“ Active
Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQDH88N06LM5SCATMA1 IQDH29NE2LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.55 $1.84
Manufacturer Infineon Technologies β€”
Part Number IQDH88N06LM5SCATMA1 β€”
Series OptiMOS 5 β€”
Technology N-Channel MOSFET (OptiMOS 5) OptiMOS 5 Power-Transistor
Drain-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID, Ta) 42 A β€”
Continuous Drain Current (ID, Tc) 447 A β€”
On-State Resistance (RDS(on)) 0.7 mOhm at VGS = 10 V β€”
Gate-Source Voltage (VGS) +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) 1.7 V β€”
Total Gate Charge (Qg) 76 nC β€”
Input Capacitance (Ciss) 11 nF β€”
Output Capacitance (Coss) 2 nF β€”
Reverse Transfer Capacitance (Crss) 95 pF β€”
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 333 W 278 W
Operating Temperature Range -55 C to +175 C β€”
Package PG-WHSON-8-U02 (source-down, dual-side cooling) PG-WHTFN-9-U02 (WHTFN EP)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Continuous Drain Current (Ta) β€” 75 A
Continuous Drain Current (Tc) β€” 789 A
Maximum On-Resistance RDS(on) β€” 0.29 mΞ©
Gate Threshold Voltage VGS(th) β€” 2 V (typ)
Pin Count β€” 9
Cooling β€” Dual-side exposed pad (top + bottom)
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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