IQE022N06LM5CGATMA1 vs IQE018N06NM6CGATMA1 对比
详细并排对比 IQE022N06LM5CGATMA1 出自 Infineon 和 IQE018N06NM6CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ 量产中规格对比
| 参数 | IQE022N06LM5CGATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $1.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V_DS) | 60 V | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | — |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | — |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | 3.3 V (logic-level compatible) |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | — |
| Power Dissipation (T_A) | 2.5 W | — |
| Power Dissipation (T_C) | 100 W | — |
| 工作温度范围 | -55C to +150C | -55C to +175C (junction) |
| 封装 | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | PG-TTFN-9-3 (TOLL/TTFN) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 9 (with exposed thermal pad) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 6 60V |
| Channel Type | — | N-Channel |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| RoHS Compliance | — | Compliant |