IQE022N06LM5CGATMA1 vs IQE018N06NM6CGATMA1 Comparison

Detailed side-by-side comparison of IQE022N06LM5CGATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE022N06LM5CGATMA1

IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΞ© | Infineon

IQE022N06LM5CGATMA1 βœ“ Active
Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active

Specification Comparison

Parameter IQE022N06LM5CGATMA1 IQE018N06NM6CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $1.21
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 β€”
Technology N-Channel Power MOSFET (Enhancement Mode) Trench MOSFET, OptiMOS 6
Drain-Source Voltage (V_DS) 60 V 60 V
Continuous Drain Current (I_D) at T_A=25C 24 A β€”
Continuous Drain Current (I_D) at T_C=25C 151 A β€”
R_DS(on) (typical, V_GS=10V) 2.2 mΞ© β€”
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] 3.3 V (logic-level compatible)
Total Gate Charge (Q_G) [DATA_NEEDED: Q_G value] β€”
Power Dissipation (T_A) 2.5 W β€”
Power Dissipation (T_C) 100 W β€”
Operating Temperature Range -55C to +150C -55C to +175C (junction)
Package PG-TTFN-9-3 (PQFN 3.3x3.3 mm) PG-TTFN-9-3 (TOLL/TTFN)
Mounting Type Surface Mount Surface Mount
Pin Count 9 (with exposed thermal pad) β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Product Family β€” OptiMOS 6 60V
Channel Type β€” N-Channel
Continuous Drain Current (I_D, Tc) β€” 178 A
Continuous Drain Current (I_D, Ta) β€” 25 A
R_DS(on) max (V_GS=10 V) β€” 1.8 mΞ©
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 125 W
RoHS Compliance β€” Compliant

Datasheets & Resources

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