IRF4905SPBF vs IRF4905STRLPBF 对比
详细并排对比 IRF4905SPBF 出自 Infineon 和 IRF4905STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF4905SPBF | IRF4905STRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $0.95 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | -260 A |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | — |
| Power Dissipation (PD, Tc=25C) | 170 W | — |
| 工作结温 | -55 C to +150 C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | — |
| 封装 | D2PAK (TO-263) surface mount | D2PAK (TO-263) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET, planar cell | HEXFET (Planar) |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | 120 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| RoHS 状态 | Compliant (PBF suffix indicates Pb-free) | Compliant |
| Qualification | JEDEC standard | — |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -74 A |
| On-Resistance RDS(on) at VGS=-10V | — | 20 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| 工作温度范围 | — | -55C to +175C |
| MSL 等级 | — | 1 |
| Lead-Free | — | Yes |