IRF4905SPBF vs IRF4905STRLPBF Comparison

Detailed side-by-side comparison of IRF4905SPBF by Infineon and IRF4905STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905SPBF IRF4905STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.95
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID, Tc=25C) -42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] -260 A
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] Β±20 V
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V β€”
Power Dissipation (PD, Tc=25C) 170 W β€”
Operating Junction Temperature -55 C to +150 C β€”
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] β€”
Package D2PAK (TO-263) surface mount D2PAK (TO-263)
Mounting Type Surface Mount Surface Mount
Technology HEXFET, planar cell HEXFET (Planar)
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) 120 nC
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
RoHS Status Compliant (PBF suffix indicates Pb-free) Compliant
Qualification JEDEC standard β€”
FET Type β€” P-Channel
Continuous Drain Current (ID) at Tc=25C β€” -74 A
On-Resistance RDS(on) at VGS=-10V β€” 20 mOhm
Power Dissipation (PD) at Tc=25C β€” 170 W
Operating Temperature Range β€” -55C to +175C
MSL Level β€” 1
Lead-Free β€” Yes

Datasheets & Resources

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