IRF640NSTRLPBF vs IRF3710STRLPBF 对比
详细并排对比 IRF640NSTRLPBF 出自 Infineon 和 IRF3710STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF640NSTRLPBF | IRF3710STRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $1.23 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (5th generation, trench MOSFET) | HEXFET / IR MOSFET (planar) |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | 150 W | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Total Gate Charge (Qg) | 44.7 nC | 86.7 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| 工作结温范围 | -55C to +175C | — |
| 封装 | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) | D2PAK (TO-263), surface mount |
| 安装类型 | Surface Mount (Tape and Reel) | Surface Mount |
| Lead-Free (PbF) | Yes | — |
| RoHS 状态 | Compliant | Compliant (Pb-free) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 57 A |
| On-Resistance RDS(on) max | — | 23 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc=25 C) | — | 200 W |
| 工作温度范围 | — | -55 C to +175 C |
| Lead-Free | — | Yes |
| Tape & Reel Orientation | — | TRL (left) |