IRF640NSTRLPBF vs IRF3710STRLPBF Comparison
Detailed side-by-side comparison of IRF640NSTRLPBF by Infineon and IRF3710STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NSTRLPBF | IRF3710STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (5th generation, trench MOSFET) | HEXFET / IR MOSFET (planar) |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | 150 W | — |
| On-Resistance (RDS(on)) at VGS=10V | 0.15 ohm | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Total Gate Charge (Qg) | 44.7 nC | 86.7 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Operating Junction Temperature Range | -55C to +175C | — |
| Package | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount (Tape and Reel) | Surface Mount |
| Lead-Free (PbF) | Yes | — |
| RoHS Status | Compliant | Compliant (Pb-free) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | — | 57 A |
| On-Resistance RDS(on) max | — | 23 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc=25 C) | — | 200 W |
| Operating Temperature Range | — | -55 C to +175 C |
| Lead-Free | — | Yes |
| Tape & Reel Orientation | — | TRL (left) |