IRF7469TRPBF vs IRFR4105TRPBF 对比

详细并排对比 IRF7469TRPBF 出自 Infineon 和 IRFR4105TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF7469TRPBF IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon

IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon

IRF7469TRPBF ✓ 量产中
Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF ✓ 量产中

规格对比

参数 IRF7469TRPBF IRFR4105TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.37 $0.58
FET Type N-Channel —
Technology IR MOSFET™ (HEXFET) HEXFET (5th generation IR MOSFET)
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) at TA=25°C 9 A —
Rds(on) Max at Vgs=10V 17 mΩ —
Total Gate Charge (Qg) 15 nC —
Gate-Source Voltage (Vgs) Max ±20 V —
Power Dissipation (Pd) at TA=25°C 2.5 W —
工作温度范围 -55°C to +150°C (Tj) -55C to +175C
封装 8-SO (SOIC-8) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant (lead-free, PBF suffix)
Lead-Free Yes —
无卤 Yes —
Channel Mode Enhancement —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V_DS max) — 55 V
Continuous Drain Current (I_D at Tc) — 27 A
On-Resistance (R_DS(on) max at V_GS=10V) — 45 milliohm
Gate-Source Voltage (V_GS max) — 20 V
Total Gate Charge (Q_G) — 22.7 nC
Power Dissipation (P_D at Tc) — 68 W
Gate Threshold Voltage (V_GS(th) typ) — [DATA_NEEDED: V_GS(th) typical value]
Packaging Type — Tape and Reel (TRPBF)
Avalanche Energy (E_AS) — [DATA_NEEDED: E_AS rating]

数据手册与资源

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