IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon
料号： IRF7469TRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.71 | $7.10 |
| 100 | $0.58 | $58.00 |
| 500 | $0.49 | $245.00 |
| 1,000 | $0.42 | $420.00 |
| 3,000 | $0.37 | $1,110.00 |
IRF7469TRPBF 概述
A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between its drain and source terminals in response to gate voltage. N-channel enhancement-mode MOSFETs like the IRF7469 are the dominant switching element in synchronous buck converters, synchronous boost converters, motor drives, and load switches because they offer low Rds(on) per unit silicon area, fast switching, and simple gate drive. The technology category hierarchy is: MOSFET → power transistor → discrete semiconductor → semiconductor device. The IR MOSFET™ process used here is a planar HEXFET-style trench variant optimized for low gate charge and high dv/dt immunity.
Key differentiating specifications include 17 mΩ max Rds(on) at VGS = 10 V, 15 nC total gate charge (Qg), and an SO-8 footprint compatible with industry-standard 8-pin land patterns. The low Qg enables sub-100 ns switching transitions at moderate gate-drive currents, which reduces switching losses in 12 V to 3.3 V buck regulators operating at 500 kHz to 1 MHz. The device is rated for operation from -55 °C to +150 °C junction temperature.
Typical applications include high-frequency isolated DC-DC converters (primary-side switch), synchronous rectification in 12 V buck regulators, motor control H-bridges, battery protection circuits, and hot-swap load switches. The 40 V drain rating provides ample margin above the 24 V industrial bus and 12 V automotive rails that dominate these topologies.
When designing with the IRF7469, ensure the gate-drive voltage reaches 10 V for full Rds(on) enhancement. Place the gate-drive resistor close to the gate pin to dampen parasitic ringing, and use a Kelvin source connection (pin 7/8) for accurate current sensing in high-current paths. The 2.5 W continuous dissipation limit means most applications require pulsed operation or substantial copper pour.
直接替换替代料： IRF7469TRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRF7469TRPBF （相同外形与封装尺寸） ——差异在于 Technology, Operating Temperature Range, Package, MSL Level, Drain-to-Source Voltage (VDS).
快速对比工具——选择替代料号进行并排对比：
IRF7469
✅ 直接替换📋 参考替代料（不在目录中）
IRFH7084TRPBF
✅ 直接替换✓ 有现货
$0.45 / 个
查看数据手册 →IRFH5020TRPBF
✅ 直接替换✓ 有现货
$0.36 / 个
查看数据手册 →BSC097N06NSATMA1
✅ 直接替换✓ 有现货
$0.38 / 个
查看数据手册 →IRFR4105TRPBF
✅ 直接替换✓ 有现货
$0.58 / 个
查看数据手册 →IPB024N10N5ATMA1
✅ 直接替换✓ 有现货
$1.86 / 个
查看数据手册 →IRF7469TRPBF 最大额定值与电气特性
| FET Type | N-Channel |
| Technology | IR MOSFET™ (HEXFET) |
| Drain-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) at TA=25°C | 9 A |
| Rds(on) Max at Vgs=10V | 17 mΩ |
| Total Gate Charge (Qg) | 15 nC |
| Gate-Source Voltage (Vgs) Max | ±20 V |
| Power Dissipation (Pd) at TA=25°C | 2.5 W |
| 工作温度范围 | -55°C to +150°C (Tj) |
| 封装 | 8-SO (SOIC-8) |
| 安装类型 | Surface Mount |
| MSL 等级 | 1 (unlimited) |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| 无卤 | Yes |
| Channel Mode | Enhancement |
IRF7469TRPBF 引脚配置
| 引脚 1 | Gate — Gate drive input |
| 引脚 2 | Drain — Drain terminal 1 |
| 引脚 3 | Source — Source terminal 1 |
| 引脚 4 | Source — Source terminal 2 |
| 引脚 5 | Drain — Drain terminal 2 |
| 引脚 6 | Drain — Drain terminal 3 |
| 引脚 7 | Source — Source terminal 3 |
| 引脚 8 | Source — Source terminal 4 |
典型应用
IRF7469TRPBF 适用于 6 应用s: 12V Synchronous Buck Converter, High-Frequency Isolated DC-DC Converter Primary-Side Switch, Battery Protection and Hot-Swap Load Switch, Automotive 12V LED Lighting Driver, Motor Drive H-Bridge (Low-Side Switch), USB PD and Power Adapter Synchronous Rectification.
12V Synchronous Buck Converter
The IRF7469TRPBF functions as the low-side synchronous rectifier in 12V-to-3.3V/5V buck converters commonly used in telecom and industrial point-of-load regulators. With 17 mΩ Rds(on) at 10V Vgs and 15 nC total gate charge, it enables switching frequencies up to 500 kHz with manageable gate-drive losses. The 40V Vdss rating provides sufficient margin above the 12V rail plus inductive ringing, while the SO-8 footprint allows direct soldering onto standard 1 oz copper land patterns. Compared to older planar MOSFETs, the IR MOSFET™ process gives faster body-diode recovery, reducing dead-time losses in synchronous rectification topologies.
推荐
High-Frequency Isolated DC-DC Converter Primary-Side Switch
The IRF7469TRPBF is rated by International Rectifier/Infineon specifically for high-frequency isolated DC-DC converter primary-side switching applications, where the MOSFET blocks half the reflected input voltage and switches at 100-500 kHz. The 15 nC Qg allows direct drive from small gate-drive transformers without excessive drive losses, while the 9A continuous current supports 30-50W converter power levels. The 40V Vdss accommodates 24V input buses with substantial margin. Design tip: place a 4.7Ω-10Ω gate resistor close to the gate pin to dampen the LC resonance between gate capacitance and transformer leakage inductance.
推荐
Battery Protection and Hot-Swap Load Switch
The IRF7469TRPBF serves as the main disconnect switch in 2-3 cell lithium-ion battery protection circuits and 12V hot-swap controllers. Its 40V Vdss handles transient spikes from inductive loads and battery hot-plug events, while the ±20V Vgs rating tolerates gate-drive transients from protection ICs. The 17 mΩ Rds(on) limits continuous conduction loss to roughly 1.5W at 9A, allowing the SO-8 package to dissipate without exceeding thermal limits in typical 25°C ambient conditions. Designers typically parallel two IRF7469s for lower Rds(on) in 20A+ applications.
推荐
Automotive 12V LED Lighting Driver
The IRF7469TRPBF is used as the main switching element in 12V automotive LED driver circuits for daytime running lights, interior lighting, and tail-light PWM dimming. Its 17 mΩ Rds(on) minimizes conduction loss when driving 1-3A LED strings, and the 40V rating handles load-dump transients up to 35V in automotive electrical environments. While not AEC-Q101 qualified, it is widely used in non-safety automotive applications. For mission-critical lighting requiring automotive qualification, the AUIRF7769L2TR provides a pin-compatible AEC-Q101 alternative in the same SO-8 footprint.
推荐
Motor Drive H-Bridge (Low-Side Switch)
The IRF7469TRPBF is deployed as a low-side switch in small brushed DC motor H-bridges for pumps, fans, and small actuators in industrial and appliance applications. Its 9A continuous current supports motors up to roughly 60W mechanical output at 12V, while the 15 nC Qg allows PWM switching up to 25 kHz for smooth speed control. The 40V Vdss handles motor back-EMF spikes that can reach 2-3 times the supply voltage during commutation. Pair with IR2104STRPBF high-low side gate driver for full H-bridge control.
推荐
USB PD and Power Adapter Synchronous Rectification
In USB Power Delivery adapters and 18-65W AC-DC converters, the IRF7469TRPBF serves as the secondary-side synchronous rectifier on the 5V/9V/12V/15V/20V output rail. Its 17 mΩ Rds(on) provides low conduction loss during continuous conduction mode (CCM) operation, and the 15 nC Qg enables switching at 65-100 kHz typical for QR/DCM flyback topologies. The 40V Vdss gives ample margin above the 20V USB PD voltage plus reflected leakage ringing. For higher-efficiency designs, modern OptiMOS alternatives with sub-5 nC Qrr reduce dead-time losses further.
推荐
推荐产品汇总
工程参考数据： IRF7469TRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRF7469 | IRFH7084TRPBF | IRFH5020TRPBF | BSC097N06NSATMA1 | IRFR4105TRPBF | IPB024N10N5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| Drain-Source Voltage (Vdss) | 40 V | 40 V | 40 V | 60 V | 60 V | 55 V | 100 V |
| Continuous Drain Current (Id) | 9 A | 9 A | 13 A | 32 A | 10 A | 27 A | 30 A |
| Rds(on) Max at Vgs=10V | 17 mΩ | 17 mΩ | 12 mΩ | 11 mΩ | 9.7 mΩ | 45 mΩ | 2.4 mΩ |
| Power Dissipation (TA=25°C) | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W |
| Technology | IR MOSFET™ (HEXFET) | IR MOSFET™ (HEXFET) | IR MOSFET™ | IR MOSFET™ | OptiMOS™ | IR MOSFET™ (HEXFET) | OptiMOS™ |
| Automotive Grade (AEC-Q101) | No | No | No | No | No | No | No |
关键差异点
- Mature IR MOSFET™ process with proven second-source （对比 BSC097N06NSATMA1)
- Lower Qg than high-current alternatives （对比 IRFH5020TRPBF)
- Right-sized 9A/40V envelope for 12V/24V designs （对比 IPB024N10N5ATMA1)
设计说明
Estimated: At continuous 9A on a 1 oz copper SO-8 land pattern with ~50°C/W RθJA, junction temperature rises ~75°C above ambient. Power dissipation = I² × Rds(on) × (1 + 0.005 × ΔT) ≈ 9² × 0.017 × 1.4 ≈ 1.93W at TA=25°C; derate to roughly 6A continuous at TA=70°C. Use maximum copper pour on drain and source pads, plus thermal vias to inner copper planes, to keep RθJA near 40°C/W for high-current applications.
The SO-8 footprint exposes drain and source across multiple pins (2-3-6-7 pattern). Connect all drain pins (2, 5, 6) directly to the switching node with a wide trace or copper pour to minimize parasitic inductance. Place the gate drive resistor within 5mm of pin 1 to dampen the LC resonance formed by gate capacitance and source-lead inductance, which can otherwise cause gate-oscillation in high-dv/dt switching.
Do not exceed Vgs of ±20V; gate-source ESD damage is a common failure mode when the gate pin is left floating during handling. Always include a 10kΩ gate-to-source pull-down resistor to keep the MOSFET off during controller start-up. When designing the snubber for inductive loads, remember the body-diode reverse recovery can cause voltage overshoot above Vdss — verify with worst-case dv/dt conditions on the bench.
At switching edges above 1V/ns, the drain-source voltage transition couples through Cgd (Miller capacitance) into the gate drive. Use a gate-drive supply with at least 1µF decoupling placed at the IC supply pin, and consider a gate-source capacitor of 1nF-10nF to slow the turn-on edge in noise-sensitive applications. For circuits where multiple MOSFETs share a gate driver, add individual 10Ω-47Ω gate resistors to prevent parallel-FET shoot-through.
合规信息
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100/AEC-Q101 qualified — use AUIRF7769L2TR for automotive applications. REACH and conflict-minerals compliance per Infineon supply-chain declarations.
