IRF7469TRPBF vs IRFR4105TRPBF Comparison

Detailed side-by-side comparison of IRF7469TRPBF by Infineon and IRFR4105TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7469TRPBF IRFR4105TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology IR MOSFET™ (HEXFET) HEXFET (5th generation IR MOSFET)
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) at TA=25°C 9 A —
Rds(on) Max at Vgs=10V 17 mΩ —
Total Gate Charge (Qg) 15 nC —
Gate-Source Voltage (Vgs) Max ±20 V —
Power Dissipation (Pd) at TA=25°C 2.5 W —
Operating Temperature Range -55°C to +150°C (Tj) -55C to +175C
Package 8-SO (SOIC-8) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant (lead-free, PBF suffix)
Lead-Free Yes —
Halogen Free Yes —
Channel Mode Enhancement —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (V_DS max) — 55 V
Continuous Drain Current (I_D at Tc) — 27 A
On-Resistance (R_DS(on) max at V_GS=10V) — 45 milliohm
Gate-Source Voltage (V_GS max) — 20 V
Total Gate Charge (Q_G) — 22.7 nC
Power Dissipation (P_D at Tc) — 68 W
Gate Threshold Voltage (V_GS(th) typ) — [DATA_NEEDED: V_GS(th) typical value]
Packaging Type — Tape and Reel (TRPBF)
Avalanche Energy (E_AS) — [DATA_NEEDED: E_AS rating]

Datasheets & Resources

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