IRFB4020PBF vs IRFB4410PBF 对比
详细并排对比 IRFB4020PBF 出自 Infineon 和 IRFB4410PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFB4020PBF | IRFB4410PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.38 | $1.15 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | MOSFET (Metal Oxide) - HEXFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| 工作结温 | 175 C (max) | — |
| 封装 | TO-220AB (through-hole) | TO-220AB (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C | — | 88 A (Tc) |
| Continuous Drain Current (Id) @ 100C | — | [DATA_NEEDED: Id @ 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulse] |
| Gate-to-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| RDS(on) max @ VGS=10V | — | 10 mOhm |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) | — | 200 W (Tc) |
| 工作温度范围 | — | -55C to +175C (Tj) |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| MSL 等级 | — | 1 (unlimited) |
| RoHS 状态 | — | Compliant (Pb-free PBF suffix) |
| Series | — | HEXFET |