IRFH7440TRPBF vs IRF7854TRPBF 对比

详细并排对比 IRFH7440TRPBF 出自 Infineon 和 IRF7854TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFH7440TRPBF IRF7854TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.48
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25°C) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max at VGS=10V) 2.4 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Total Gate Charge (Qg) 92 nC —
Power Dissipation (PD, Tc=25°C) 104 W —
工作结温 -55°C to +150°C —
Technology StrongIRFET™ (HEXFET) HEXFET (planar N-channel)
封装 8-PQFN (5x6 mm) with exposed thermal pad SO-8
安装类型 Surface Mount Surface Mount
Gate Drive Optimization 10V (Normal Level), switching < 100 kHz —
Qualification JEDEC standard JEDEC industrial, Normal level
Lead-Free / RoHS Lead-Free, RoHS Compliant (PBF suffix) Yes (PBF suffix, lead-free)
MSL (Moisture Sensitivity Level) MSL 1 —
Typical Applications Brushed motor drive, DC-DC converters, solenoid/load switching —
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
工作温度范围 — -55°C to +150°C (TJ)
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

数据手册与资源

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