IRFH7440TRPBF vs IRF7854TRPBF Comparison

Detailed side-by-side comparison of IRFH7440TRPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFH7440TRPBF IRF7854TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25°C) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max at VGS=10V) 2.4 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Total Gate Charge (Qg) 92 nC —
Power Dissipation (PD, Tc=25°C) 104 W —
Operating Junction Temperature -55°C to +150°C —
Technology StrongIRFET™ (HEXFET) HEXFET (planar N-channel)
Package 8-PQFN (5x6 mm) with exposed thermal pad SO-8
Mounting Type Surface Mount Surface Mount
Gate Drive Optimization 10V (Normal Level), switching < 100 kHz —
Qualification JEDEC standard JEDEC industrial, Normal level
Lead-Free / RoHS Lead-Free, RoHS Compliant (PBF suffix) Yes (PBF suffix, lead-free)
MSL (Moisture Sensitivity Level) MSL 1 —
Typical Applications Brushed motor drive, DC-DC converters, solenoid/load switching —
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
Operating Temperature Range — -55°C to +150°C (TJ)
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

Datasheets & Resources

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